- Concentric Electron
A new method of analytical electron
determination of extremely small amounts of dopants at planar faults
In the process of atomic structure
and chemical composition retrieval of IBs in ZnO we developed a new
method of analytical TEM, which enables accurate and precise
determination of chemical composition of interfaces on subnanometric
level. The method is dedicated for determination of fine structural
elements at the initial stage of phase transformations by providing up to
2 orders of magnitude more accurate results compared to the existing
analytical TEM methods. The technique was originally developed on the
inversion boundaries in zinc oxide and it is widely used in solving the
defect structures in various materials.
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